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QH8MA4

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QH8MA4 Image

The QH8MA4 from ROHM Semiconductor is a MOSFET with Continous Drain Current -9 to 9 A, Drain Source Resistance 12.3 to 40.3 Milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for QH8MA4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QH8MA4
  • Manufacturer
    ROHM Semiconductor
  • Description
    -30 to 30 V, 7.9 to 19.6 nC, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -9 to 9 A
  • Drain Source Resistance
    12.3 to 40.3 Milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    7.9 to 19.6 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
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