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QS8J2

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QS8J2 Image

The QS8J2 from ROHM Semiconductor is a MOSFET with Continous Drain Current -4 to 4 A, Drain Source Resistance 26 to 132 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for QS8J2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QS8J2
  • Manufacturer
    ROHM Semiconductor
  • Description
    -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 to 4 A
  • Drain Source Resistance
    26 to 132 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    20 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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