R6004RND3

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The R6004RND3 from ROHM Semiconductor is a Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of 600 V, a gate threshold voltage of 6 V, and a drain-source on-resistance of 1.33 ohms.  This MOSFET has a continuous drain current of less than 4 A and a pulsed drain current of up to 12 A. It has a power dissipation of less than 60 W. This MOSFET boasts a fast reverse recovery time (trr) for enhanced efficiency and superior performance. It provides low on-resistance, optimizing power utilization to the fullest potential. This RoHS-compliant MOSFET offers rapid switching speed and simplifies drive circuits for effortless integration. It is available in a surface-mount package that measures 6.80 x 10.40 mm.

Product Specifications

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Product Details

  • Part Number
    R6004RND3
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V Power MOSFET for Switching Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    6.80 x 10.40 mm
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1.33 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    6 V
  • Gate Charge
    10.5 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Switching Applications

Technical Documents

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