The R6004RND3 from ROHM Semiconductor is a Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of 600 V, a gate threshold voltage of 6 V, and a drain-source on-resistance of 1.33 ohms.  This MOSFET has a continuous drain current of less than 4 A and a pulsed drain current of up to 12 A. It has a power dissipation of less than 60 W. This MOSFET boasts a fast reverse recovery time (trr) for enhanced efficiency and superior performance. It provides low on-resistance, optimizing power utilization to the fullest potential. This RoHS-compliant MOSFET offers rapid switching speed and simplifies drive circuits for effortless integration. It is available in a surface-mount package that measures 6.80 x 10.40 mm.