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RQ1A060ZP

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RQ1A060ZP Image

The RQ1A060ZP from ROHM Semiconductor is a MOSFET with Continous Drain Current -6 to 6 A, Drain Source Resistance 16 to 78 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RQ1A060ZP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ1A060ZP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -12 V, 34 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 to 6 A
  • Drain Source Resistance
    16 to 78 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    34 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
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