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RQ1A070AP

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The RQ1A070AP from ROHM Semiconductor is a MOSFET with Continous Drain Current -7 to 7 A, Drain Source Resistance 10 to 31 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 0 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RQ1A070AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ1A070AP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -12 V, 80 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7 to 7 A
  • Drain Source Resistance
    10 to 31 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 0 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    80 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSMT8
  • Applications
    Road SW

Technical Documents
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