1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RQ3E110AJ

RQ3E110AJ

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RQ3E110AJ Image

The RQ3E110AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -24 to 24 A, Drain Source Resistance 8.8 to 16.5 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RQ3E110AJ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQ3E110AJ
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -24 to 24 A
  • Drain Source Resistance
    8.8 to 16.5 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    13.5 nC
  • Power Dissipation
    15 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSMT8
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products