1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. RQ7G080AT

RQ7G080AT

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RQ7G080AT Image

The RQ7G080AT from ROHM Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 14.7 to 22.6 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RQ7G080AT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQ7G080AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    14.7 to 22.6 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    18 to 37 nC
  • Power Dissipation
    1.1 to 1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products