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RS1G201AT

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The RS1G201AT from ROHM Semiconductor is a MOSFET with Continous Drain Current 20 to 78 A, Drain Source Resistance 4.2 to 6.5 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RS1G201AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS1G201AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 to 78 A
  • Drain Source Resistance
    4.2 to 6.5 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    62 to 130 nC
  • Power Dissipation
    3 to 40 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    HSOP8
  • Applications
    Load Switching

Technical Documents
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