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RS1P600BH

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The RS1P600BH from ROHM Semiconductor is a MOSFET with Continous Drain Current -60 to 60 A, Drain Source Resistance 6.7 to 12.9 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RS1P600BH can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS1P600BH
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, 64 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 to 60 A
  • Drain Source Resistance
    6.7 to 12.9 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    64 nC
  • Power Dissipation
    35 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8S
  • Applications
    Primary side switch, Moter drives, DC/DC converter

Technical Documents
View details on the manufacturer's website
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