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RS6G120CHTB1

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The RS6G120CHTB1 from ROHM Semiconductor is a MOSFET with Continous Drain Current -300 to 300 A, Drain Source Resistance 0.78 to 1.76 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for RS6G120CHTB1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS6G120CHTB1
  • Manufacturer
    ROHM Semiconductor
  • Description
    40 V, -300 to 300 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -300 to 300 A
  • Drain Source Resistance
    0.78 to 1.76 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    44 to 71 nC
  • Switching Speed
    36 to 80 ns
  • Power Dissipation
    3.6 to 166 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8
  • Applications
    Switching, Motor drives, DC/DC converter
  • Note
    Input Capacitance :- 5100 pF

Technical Documents
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