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RSR010N10HZG

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RSR010N10HZG Image

The RSR010N10HZG from ROHM Semiconductor is a MOSFET with Continous Drain Current -1 to 1 A, Drain Source Resistance 370 to 580 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RSR010N10HZG can be seen below.

Product Specifications

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Product Details

  • Part Number
    RSR010N10HZG
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1 to 1 A
  • Drain Source Resistance
    370 to 580 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    3.5 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-346T
  • Applications
    DC/DC converters

Technical Documents
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