The RYC002N05 from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.2 to 0.2 A, Drain Source Resistance 1.6 to 9 Milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 0.8 V. Tags: Surface Mount. More details for RYC002N05 can be seen below.
