S4102

Note : Your request will be directed to ROHM Semiconductor.

The S4102 from ROHM Semiconductor is a MOSFET with Continous Drain Current 72 A, Drain Source Resistance 30 to 45 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4 to 22 V, Gate Source Threshold Voltage 2.7 to 5.6 V. Tags: Die. More details for S4102 can be seen below.

Product Specifications

View similar products

Product Details

Part Number
S4102
Manufacturer
ROHM Semiconductor
Description
1200 V, 131 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Technology

SiC
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

72 A
Drain Source Resistance

30 to 45 Milliohm
Drain Source Breakdown Voltage

1200 V
Gate Source Voltage

-4 to 22 V
Gate Source Threshold Voltage

2.7 to 5.6 V
Gate Charge

131 nC
Industry

Industrial, Commercial
RoHS Compliant

Yes
Package Type

Die
Applications

Solar inverters, DC/DC converters, Switch mode power supplies, Induction heating, Motor drives