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SCT2H12NY

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SCT2H12NY Image

The SCT2H12NY from ROHM Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1150 to 1710 Milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -6 to 22 V, Gate Source Threshold Voltage 1.4 to 4 V. Tags: Surface Mount. More details for SCT2H12NY can be seen below.

Product Specifications

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Product Details

  • Part Number
    SCT2H12NY
  • Manufacturer
    ROHM Semiconductor
  • Description
    1700 V, 14 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1150 to 1710 Milliohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -6 to 22 V
  • Gate Source Threshold Voltage
    1.4 to 4 V
  • Gate Charge
    14 nC
  • Power Dissipation
    44 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-268-2L
  • Applications
    Auxilialy power supplies, Switch mode power supplies

Technical Documents
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