The GCMS080B120S1-E1 from SemiQ is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of 1200 V with a drain-source resistance of 77 mΩ and a gate threshold voltage of 2.8 V. It has a continuous drain current of 30 A, a pulsed drain current of 80 A, and has a power dissipation of 142 W. This MOSFET consists of a freewheeling diode and SiC Schottky barrier diode that provide optimal performance without the trade-offs made with silicon devices. It is simple to drive and offers a high switching speed in conjunction with low switching losses. This SiC MOSFET is available in a module that measures 38 x 25.15 mm and is ideal for photovoltaic inverters, battery chargers, server power supplies, and energy storage systems.