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GCMX030A170S1-E1

MOSFET by SemiQ (12 more products)
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GCMX030A170S1-E1 Image

The GCMX030A170S1-E1 from SemiQ is a MOSFET with Continous Drain Current 48 to 88 A, Drain Source Resistance 28 to 38 milli-ohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Surface Mount. More details for GCMX030A170S1-E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GCMX030A170S1-E1
  • Manufacturer
    SemiQ
  • Description
    -10 to 25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    48 to 88 A
  • Drain Source Resistance
    28 to 38 milli-ohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    226 nC
  • Power Dissipation
    341 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-227
  • Applications
    Photovoltaic Inverter, Battery charger, Server power supplies, Energy storage system

Technical Documents
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