The GP2T040A120U from SemiQ is a SiC MOSFET that has been specifically designed for power factor correction, primary switching in DC-DC converters, and synchronous rectification. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.4 V, and a drain-source on-resistance of less than 45 mΩ. This REACH-qualified MOSFET has a continuous drain current of up to 63 A and power dissipation of less than 322 W. It offers high-speed switching and a driver source pin for gate driving and ensures lower capacitance, higher system efficiency, lower switching loss, and longer creepage distance. This RoHS-compliant MOSFET is available in a through-hole package that measures 16.26 x 21.46 x 5.31 mm and is ideal for solar inverters, switch mode power supplies, UPS, induction heating, and welding, EV charging stations, high voltage DC/DC converters, motor drives applications.