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SHD226409

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The SHD226409 from Sensitron Semiconductor is a MOSFET with Continous Drain Current -13 A, Drain Source Resistance 0.21 to 0.24 ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Charge 31 to 60 nC. Tags: Through Hole. More details for SHD226409 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SHD226409
  • Manufacturer
    Sensitron Semiconductor
  • Description
    -100 V, -13 A, P-Channel Enhancement Mode HERMETIC MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13 A
  • Drain Source Resistance
    0.21 to 0.24 ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    31 to 60 nC
  • Switching Speed
    35 to 85 ns
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-257
  • Note
    Input Capacitance :- 1400 pF

Technical Documents
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