The ADP280120W3 from STMicroelectronics is an Automotive-Qualified SiC Power MOSFET that has been optimized for hybrid and electric vehicle traction inverters. It has a drain-source breakdown voltage of up to 1200 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of less than 5.05 milli-ohms. This Power MOSFET has a continuous drain current of up to 275 A and a power dissipation of less than 549 W. It is fabricated on a Silicon Nitride (Si3N4) AMB substrate to improve thermal performance and has undergone a sintering process to ensure an improved lifetime. This AQG-324 qualified MOSFET integrates switches that are based on the third-generation SiC Power MOSFET that offers very low drain-source on-resistance and switching losses while providing outstanding performances in synchronous rectification working mode.
The ADP280120W3 uses a copper base plate with a pin-fin base structure that allows for direct fluid-based cooling to minimize thermal resistance and incorporates three NTC temperature sensors for better thermal monitoring and management. This SiC MOSFET has a dedicated pin-out offering the best switching performances with built-in press-fit pins that ensures an optimal connection with the driving board. It is available in a module that measures 154.50 x 126.50 mm and is ideal for main inverter (electric traction) applications.
