ADP360120W3

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The ADP360120W3 from STMicroelectronics is an Automotive Qualified SiC MOSFET that has been optimized for hybrid and electric vehicles traction inverters.  It has a drain-source breakdown voltage of up to 1200 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of less than 3.45 milli-ohms. This MOSFET has a continuous drain current of up to 379 A and a power dissipation of less than 704 W. It includes switches that are based on the third-generation silicon carbide power MOSFETs offering very low drain-source on-resistance, very limited switching losses, and outstanding performances under synchronous rectification conditions to ensure optimal efficiency. It includes a copper base plate with a pin-fin structure enabling direct fluid cooling for the power module, thereby minimizing thermal resistance. This AQG-324-qualified MOSFET integrates a dedicated pin-out for best switching performance with pins that are press-fitted to ensure optimal connection with the driving board. It is available as a module that measures 154.50 x 126.50 x 32 mm.

Product Specifications

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Product Details

  • Part Number
    ADP360120W3
  • Manufacturer
    STMicroelectronics
  • Description
    1200 V SiC MOSFET for Electric Vehicle Traction Inverters

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    154.50 x 126.50 x 32 mm
  • Continous Drain Current
    379 A
  • Drain Source Resistance
    3.45 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -5 to 18 V
  • Gate Source Threshold Voltage
    3.1 V
  • Gate Charge
    944 nC
  • Power Dissipation
    704 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AQG324
  • RoHS Compliant
    Yes
  • Package Type
    Module
  • Package
    ACEPACK DRIVE
  • Applications
    Main inverter (electric traction)

Technical Documents

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