The ADP360120W3 from STMicroelectronics is an Automotive Qualified SiC MOSFET that has been optimized for hybrid and electric vehicles traction inverters.  It has a drain-source breakdown voltage of up to 1200 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of less than 3.45 milli-ohms. This MOSFET has a continuous drain current of up to 379 A and a power dissipation of less than 704 W. It includes switches that are based on the third-generation silicon carbide power MOSFETs offering very low drain-source on-resistance, very limited switching losses, and outstanding performances under synchronous rectification conditions to ensure optimal efficiency. It includes a copper base plate with a pin-fin structure enabling direct fluid cooling for the power module, thereby minimizing thermal resistance. This AQG-324-qualified MOSFET integrates a dedicated pin-out for best switching performance with pins that are press-fitted to ensure optimal connection with the driving board. It is available as a module that measures 154.50 x 126.50 x 32 mm.