The SH32N65DM6AG from STMicroelectronics is an Automotive-grade N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications.  It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 97 milli-ohms. This power MOSFET has a continuous drain current of up to 32 A and a power dissipation of less than 208 W. It combines two N-Channel Power MOSFETs in a half-bridge topology. This power MOSFET integrates a dice on direct copper bond (DBC) substrate and couples a thermal pad at the top side, which results in low thermal resistance. It has a highly flexible design that enables several configurations, including phase legs, boost, and single switch, through different combinations of internal power switches. This AQG-324-qualified power MOSFET is available in a surface-mount package that measures 32.70 x 25 mm.