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STD7NM80

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STD7NM80 Image

The STD7NM80 from STMicroelectronics is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 950 to 1050 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STD7NM80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD7NM80
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 18 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    950 to 1050 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    18 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching applications

Technical Documents
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