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STP180N4F6

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STP180N4F6 Image

The STP180N4F6 from STMicroelectronics is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 2.1 to 2.7 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STP180N4F6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP180N4F6
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 130 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    2.1 to 2.7 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    130 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications, Power tools

Technical Documents
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