The STP65N045M9 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate-source threshold voltage of 3.7 V, and a drain-source resistance of less than 45 milliohm. This Power MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of 170 A. It has a power dissipation of up to 245 W. This MOSFET uses the most innovative silicon-based super-junction MDmesh M9 technology that is designed through a multi-drain manufacturing process thereby offering an enhanced device structure. It is available in a through-hole package that measures 10 mm x 28.90 mm and is ideal for high-efficiency switching applications.