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TSM043NB04CZ

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TSM043NB04CZ Image

The TSM043NB04CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 124 A, Drain Source Resistance 3.1 to 6.7 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM043NB04CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM043NB04CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    124 A
  • Drain Source Resistance
    3.1 to 6.7 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    54 to 74 nC
  • Power Dissipation
    0.4 to 125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    BLDC Motor Control, Battery Power Management, DC-DC Converter, Secondary Synchronous Rectification

Technical Documents
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