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TSM110NB04DCR

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TSM110NB04DCR Image

The TSM110NB04DCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 48 A, Drain Source Resistance 8.5 to 17.2 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TSM110NB04DCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM110NB04DCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V, 17 to 25 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    48 A
  • Drain Source Resistance
    8.5 to 17.2 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    17 to 25 nC
  • Power Dissipation
    0.4 to 48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56 Dual
  • Applications
    BLDC Motor Control, Battery Power Management, DC-DC Converter, Secondary Synchronous Rectification

Technical Documents
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