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TSM200N03DPQ33

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TSM200N03DPQ33 Image

The TSM200N03DPQ33 from Taiwan Semiconductor is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 17 to 30 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for TSM200N03DPQ33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM200N03DPQ33
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 4.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    17 to 30 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    4.1 nC
  • Power Dissipation
    20 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN33 Dual
  • Applications
    Power Supply, Motor Control

Technical Documents
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