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TSM2302CX

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TSM2302CX Image

The TSM2302CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 34 to 95 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.65 to 1.2 V. Tags: Surface Mount. More details for TSM2302CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2302CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    20 V, 7.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    34 to 95 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.65 to 1.2 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load switch, Backlights

Technical Documents
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