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TSM680P06DPQ56

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The TSM680P06DPQ56 from Taiwan Semiconductor is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 54 to 110 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for TSM680P06DPQ56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM680P06DPQ56
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    54 to 110 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.2 V
  • Gate Charge
    16.4 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Power Supply, Motor Control

Technical Documents
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