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XP222P08013R-G

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The XP222P08013R-G from Torex Semiconductor is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 300 to 1200 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.3 to -0.4 V. Tags: Surface Mount. More details for XP222P08013R-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    XP222P08013R-G
  • Manufacturer
    Torex Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    300 to 1200 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.3 to -0.4 V
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323-3A
  • Applications
    Switching

Technical Documents
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