The MG250V2YMS3 from Toshiba is an N-Channel Enhancement mode MOSFET. It has a drain-source breakdown voltage of 1700 V and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of up to 250 A and a power dissipation of less than 1350 W. It has low stray inductance and thermal resistance with a built-in thermistor to enhance thermal characteristics. This power MOSFET features low power loss and high-speed switching and has its electrodes isolated from the metal base plate. It is available as a module that measures 152 x 62 mm and is ideal for high-power switching and motor controller applications.
