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SSM3J112TU

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SSM3J112TU Image

The SSM3J112TU from Toshiba is a MOSFET with Continous Drain Current -1.1 A, Drain Source Resistance 310 to 790 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.8 to -0.8 V. Tags: Surface Mount. More details for SSM3J112TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3J112TU
  • Manufacturer
    Toshiba
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.1 A
  • Drain Source Resistance
    310 to 790 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.8 to -0.8 V
  • Power Dissipation
    0.8 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UFM
  • Applications
    High Speed Switching Applications

Technical Documents
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