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SSM3J140TU

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SSM3J140TU Image

The SSM3J140TU from Toshiba is a MOSFET with Continous Drain Current -4.4 A, Drain Source Resistance 20.9 to 63.2 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 6 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM3J140TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3J140TU
  • Manufacturer
    Toshiba
  • Description
    -20 V, 24.8 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.4 A
  • Drain Source Resistance
    20.9 to 63.2 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    24.8 nC
  • Power Dissipation
    1 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UFM
  • Applications
    Power Management Switches

Technical Documents
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