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SSM6L820R

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SSM6L820R Image

The SSM6L820R from Toshiba is a MOSFET with Continous Drain Current -4 to 4 A, Drain Source Resistance 30 to 157 milliohm, Drain Source Breakdown Voltage -20 to 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to 0.4 V. Tags: Surface Mount. More details for SSM6L820R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6L820R
  • Manufacturer
    Toshiba
  • Description
    -20 to 30 V, 6.7 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 to 4 A
  • Drain Source Resistance
    30 to 157 milliohm
  • Drain Source Breakdown Voltage
    -20 to 30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to 0.4 V
  • Gate Charge
    6.7 nC
  • Power Dissipation
    1.8 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches

Technical Documents
View details on the manufacturer's website
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