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SSM6P49NU

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The SSM6P49NU from Toshiba is a MOSFET with Continous Drain Current -4 A, Drain Source Resistance 36 to 157 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for SSM6P49NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6P49NU
  • Manufacturer
    Toshiba
  • Description
    -20 V, 6.74 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 A
  • Drain Source Resistance
    36 to 157 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Gate Charge
    6.74 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6
  • Applications
    Power Management Switches

Technical Documents
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