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TK50J30D

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TK50J30D Image

The TK50J30D from Toshiba is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 40 to 52 milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Through Hole. More details for TK50J30D can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK50J30D
  • Manufacturer
    Toshiba
  • Description
    300 V, 160 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    40 to 52 milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    160 nC
  • Power Dissipation
    410 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
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