The TK7S10N1Z from Toshiba is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 40 to 48 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TK7S10N1Z can be seen below.