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TPH3R008QM

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The TPH3R008QM from Toshiba is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.3 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for TPH3R008QM can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH3R008QM
  • Manufacturer
    Toshiba
  • Description
    Silicon N-channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    2.3 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    71 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
View details on the manufacturer's website
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