1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TPN1600ANH

TPN1600ANH

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TPN1600ANH Image

The TPN1600ANH from Toshiba is a MOSFET with Continous Drain Current 36 A, Drain Source Resistance 13 to 16 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPN1600ANH can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TPN1600ANH
  • Manufacturer
    Toshiba
  • Description
    100 V, 19 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36 A
  • Drain Source Resistance
    13 to 16 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    19 nC
  • Power Dissipation
    42 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products