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TW045N120C

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TW045N120C Image

The TW045N120C from Toshiba is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 45 to 67 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for TW045N120C can be seen below.

Product Specifications

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Product Details

  • Part Number
    TW045N120C
  • Manufacturer
    Toshiba
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    45 to 67 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    57 nC
  • Power Dissipation
    182 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching Voltage Regulators

Technical Documents
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