The XPQ1R004PB from Toshiba is an Automotive Qualified N-Channel Enhancement Mode MOSFET that is ideal for automotive, switching voltage regulators, motor drivers, and DC-DC converter applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of less than 3 V, and a drain-source on-resistance of 1.2 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 200 A and a power dissipation of less than 230 W. It is available in a surface-mount package that measures 10.24 x 11.81 x 2.3 mm.