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IRFY120

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The IRFY120 from TT Electronics is a MOSFET with Continous Drain Current 7.3 A, Drain Source Resistance 310 to 360 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFY120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFY120
  • Manufacturer
    TT Electronics
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.3 A
  • Drain Source Resistance
    310 to 360 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7.7 to 17 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO–257AA
  • Applications
    Various Aerospace and Space

Technical Documents
View details on the manufacturer's website
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