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UN010DN26TE

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The UN010DN26TE from UN Semiconductor is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 3.2 to 10 ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.0 V. Tags: Surface Mount. More details for UN010DN26TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN010DN26TE
  • Manufacturer
    UN Semiconductor
  • Description
    100 V, 0.3 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    3.2 to 10 ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2.0 V
  • Gate Charge
    7 nC
  • Switching Speed
    8 to 16 ns
  • Power Dissipation
    0.83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 60 pF

Technical Documents
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