The UN0413N1R4-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 139 A, Drain Source Resistance 1.4 to 3.0 milli-ohm, Drain Source Breakdown Voltage 45 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for UN0413N1R4-PD56 can be seen below.