The UN1012N3R4-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 3.4 to 6.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for UN1012N3R4-PD56 can be seen below.