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UN1012N3R4-PD56

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The UN1012N3R4-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 3.4 to 6.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for UN1012N3R4-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN1012N3R4-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    100 V, 100 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    3.4 to 6.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    75 nC
  • Switching Speed
    14.8 to 66.0 ns
  • Power Dissipation
    50 to 125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
  • Applications
    DC/DC Converter, Battery Management System, Industrial and Motor Drive applications, Synchronous rectifier applications, Half-bridge and full-bridge topologies
  • Note
    Input Capacitance :- 4445 pF

Technical Documents
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