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UN200P26T

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The UN200P26T from UN Semiconductor is a MOSFET with Continous Drain Current -2.0 A, Drain Source Resistance 85 to 160 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.5 to -1 V. Tags: Surface Mount. More details for UN200P26T can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN200P26T
  • Manufacturer
    UN Semiconductor
  • Description
    -20 V, -2.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.0 A
  • Drain Source Resistance
    85 to 160 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.5 to -1 V
  • Gate Charge
    4.8 nC
  • Switching Speed
    8.0 to 35 ns
  • Power Dissipation
    0.78 to 0.51 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    DC/DC Converter for Portable Devices, Load/Power Switching for portable device
  • Note
    Input Capacitance :- 550 pF

Technical Documents
View details on the manufacturer's website
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