The UN600N32TE from UN Semiconductor is a MOSFET with Continous Drain Current 0.34 A, Drain Source Resistance 1.6 to 5 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Surface Mount. More details for UN600N32TE can be seen below.