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QM3017M3

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The QM3017M3 from uPI Semiconductor is a MOSFET with Continous Drain Current -8.9 to -56 A, Drain Source Resistance 6.3 to 13 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for QM3017M3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QM3017M3
  • Manufacturer
    uPI Semiconductor
  • Description
    -30 V, -8.9 to -56 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.9 to -56 A
  • Drain Source Resistance
    6.3 to 13 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    30 nC
  • Switching Speed
    9.4 to 117 ns
  • Power Dissipation
    43.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PRPAK3x3
  • Note
    Input Capacitance :- 3448 pF

Technical Documents
View details on the manufacturer's website
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