1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. IRLI640G

IRLI640G

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

IRLI640G Image

The IRLI640G from Vishay is a MOSFET with Continous Drain Current 9.9 A, Drain Source Resistance 180 to 270 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for IRLI640G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRLI640G
  • Manufacturer
    Vishay
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.9 A
  • Drain Source Resistance
    180 to 270 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    66 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220 FULLPAK

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products