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Si1401EDH

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Si1401EDH Image

The Si1401EDH from Vishay is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 28 to 110 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.4 to -1 V. Tags: Surface Mount. More details for Si1401EDH can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si1401EDH
  • Manufacturer
    Vishay
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    28 to 110 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.4 to -1 V
  • Gate Charge
    24 to 36 nC
  • Power Dissipation
    2.8 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC70-6
  • Applications
    Load Switch, PA Switch and Battery Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

Technical Documents
View details on the manufacturer's website
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